{"id":1719,"date":"2020-11-07T15:34:27","date_gmt":"2020-11-07T14:34:27","guid":{"rendered":"https:\/\/www.netscientificjournals.com\/smart-platform\/?post_type=call_for_papers&p=1719"},"modified":"2021-01-14T21:55:10","modified_gmt":"2021-01-14T20:55:10","slug":"performance-and-reliability-of-wide-bandgap-semiconductor-and-nano-device-based-circuits-for-energy-systems","status":"publish","type":"call_for_papers","link":"https:\/\/www.netscientificjournals.com\/smart-platform\/?call_for_papers=performance-and-reliability-of-wide-bandgap-semiconductor-and-nano-device-based-circuits-for-energy-systems","title":{"rendered":"Performance and Reliability of Wide Bandgap Semiconductor and Nano Device-Based Circuits for Energy Systems"},"content":{"rendered":"

Energy systems are rapidly moving toward the adoption of wide-bandgap semiconductor (WBG) devices for improved performance and\/or environmental robustness in traditional power electronics applications. \u00a0Such applications include power conversion in grid energy management, electric vehicles, and space\/military platforms as well as newly emerging areas in wireless energy transfer\/charging, energy storage, data center efficiency, and high density power conversion.\u00a0Growing interest is seen from manufacturer and government investments in the utilization of SiC, GaN semiconductors, and more recently Ga2<\/sub>O3<\/sub>, are being developed in a variety of device structures in both a horizontal and vertical fashion. With the advantageous capabilities offered by these semiconductors, increased demands are being placed on their operation\/performance; thus device and circuit reliability represent critical criteria in their adoption into real systems.\u00a0This Special Issue aims to collect original research and review articles that relate reliability and performance for WBG semiconductor devices (of various materials and device structures) and circuits (or various topologies and operating domains) in energy systems. Additionally, submissions are sought that describe the standards that these technologies should meet for specific application areas.
\nKeywords: power electronics;\u00a0reliability;\u00a0wide bandgap semiconductor;\u00a0GaN;\u00a0SiC;\u00a0Ga2<\/sub>O3<\/sub>; semiconductor;\u00a0nanoelectronic device;\u00a0power conversion circuit;\u00a0environmental robustness;\u00a0electric grid;\u00a0electric vehicle;\u00a0space power conversion; military power conversion.<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"template":"","format":"standard","topic":[554,669,449,632,736,459,300,696,615,716,694,634,534,616,617,565],"country":[55],"nsj_language":[57],"class_list":["post-1719","call_for_papers","type-call_for_papers","status-publish","format-standard","hentry","topic-electrical-engineering","topic-enabling-technologies","topic-energy-efficiency","topic-energy-storage","topic-energy-systems","topic-green-mobility","topic-innovation","topic-innovative-applications","topic-innovative-technologies","topic-management","topic-manufacturing-process","topic-manufacturing-systems","topic-mobility","topic-performance-evaluation","topic-performance-based-design","topic-smart-grids","country-switzerland","nsj_language-english"],"acf":[],"yoast_head":"\nPerformance and Reliability of Wide Bandgap Semiconductor and Nano Device-Based Circuits for Energy Systems - 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